Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches
نویسندگان
چکیده
We report on ammonia and plasma-assisted molecular beam epitaxy (NH3-MBE PAMBE) grown GaN layers with a low net carrier concentration (Nnet). Growth parameters, such as growth rate, V–III ratio, plasma power, were investigated different substrates to study their impact surface morphology background doping levels using atomic force microscopy capacitance–voltage (C–V) measurements, respectively. The elevated rates are especially interesting for vertical power switches, requiring very thick drift regions (over 10 ?m) concentrations. For our NH3-MBE-grown layers, Nnet shows an almost linear increase the rate. Using freestanding substrate at fast rate of 1.4 ?m hr?1, value 1 × 1015 cm?3 was achieved. samples via PAMBE, lowest among under Ga adlayer 2 1016 0.32 h?1 GaN-on-sapphire template. results support use MBE growing high-quality material reasonably maintaining high-voltage electronic devices.
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ژورنال
عنوان ژورنال: APL Materials
سال: 2021
ISSN: ['2166-532X']
DOI: https://doi.org/10.1063/5.0060154